ZNBG4000高難度芯片專業(yè)解密資料

來源：IC解密
DEVICE DESCRIPTION
The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs,PMR,cellular telephones etc.with a minimum of external components. With the addition of two capacitors and resistors the devices provide drain  voltage and current control for a number of external grounded source FETs, generating the regulated negative rail required for FET gate biasing whilst operating from a single supply. This negative bias, at -3 volts, can also be used to supply other external circuits.
FEATURES
· Provides bias for GaAs and HEMT FETs
· Drives up to four or six FETs
· Dynamic FET protection
· Drain current set by external resistor
· Regulated negative rail generator
requires only 2 external capacitors
· Choice in drain voltage
· Wide supply voltage range
· QSOP surface mount package