深圳耐斯迪科技長期致力于業(yè)界疑難芯片/單片機(jī)解密技術(shù)研究、芯片解密成本降低技術(shù)手法研究，依托自身強(qiáng)大的技術(shù)研發(fā)團(tuán)隊(duì)，針對行業(yè)疑難項(xiàng)目和重要核心技術(shù)開展多項(xiàng)技術(shù)攻關(guān)，為國內(nèi)外數(shù)萬家大型企業(yè)、科研單位、高等院所解決了無數(shù)技術(shù)難題?，F(xiàn)對外提供EP2A15芯片解密服務(wù)，歡迎來電咨詢。
以下是EP2A15芯片的主要特征：
Programmable logic device (PLD) manufactured using a 0.15-µm all-layer copper-metal fabrication process (up to eight layers of metal)
– 1-gigabit per second (Gbps) True-LVDS
TM
, LVPECL, pseudo
current mode logic (PCML), and HyperTransport
TM
interface
– Clock-data synchronization (CDS) in True-LVDS interface to
correct any fixed clock-to-data skew
– Enables common networking and communications bus I/O
standards such as RapidIO
TM
, CSIX, Utopia IV, and POS-PHY
Level 4
– Support for high-speed external memory interfaces, including
zero bus turnaround (ZBT), quad data rate (QDR), and double
data rate (DDR) static RAM (SRAM), and single data rate (SDR)
and DDR synchronous dynamic RAM (SDRAM)
–30%to 40%faster design performance than APEX
TM
20KE
devices on average
– Enhanced 4,096-bit embedded system blocks (ESBs)
implementing first-in first-out (FIFO) buffers, Dual-Port+ RAM
(bidirectional dual-port RAM), and content-addressable
memory (CAM)
– High-performance, low-power copper interconnect
– Fast parallel byte-wide synchronous device configuration
– Look-up table (LUT) logic available for register-intensive
functions
■ High-density architecture
– 1,900,000 to 5,250,000 maximum system gates (see Table 1)
– Up to 67,200 logic elements (LEs)
– Up to 1,146,880 RAM bits that can be used without reducing
available logic
■ Low-power operation design
– 1.5-V supply voltage
– Copper interconnect reduces power consumption
– MultiVolt
TM
I/O support for 1.5-V, 1.8-V, 2.5-V, and 3.3-V
interfaces
– ESBs offer programmable power-saving mode